- Product Model EPC2219
- Brand EPC
- RoHS Yes
- Description TRANS GAN 65V AECQ101 3.3OHM DIE
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.58
- 5000 0.55
- 12500 0.53
Technical Details
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
- Rds On (Max) @ Id, Vgs 3.3Ohm @ 59mA, 5V
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Drain to Source Voltage (Vdss) 65 V
- Gate Charge (Qg) (Max) @ Vgs 0.064 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 32.5 V
Related Products
IC FLASH 4MBIT SPI 104MHZ 8WLCSP
Inventory: 108552
DIODE SCHOTTKY 30V 500MA 01005
Inventory: 7365
GANFET N-CH 40V 10A DIE OUTLINE
Inventory: 52011
GANFET N-CH 60V 1.7A DIE
Inventory: 40896
GANFET N-CH 100V 500MA DIE
Inventory: 82458
TRANS GAN BUMPED DIE
Inventory: 12647
MOSFET N-CH 20V 4WLCSP
Inventory: 47170
IC BUCK-BOOST 3A WL-CSP-15
Inventory: 1047
