- Product Model FDP100N10
- Brand Fairchild Semiconductor
- RoHS No
- Description POWER FIELD-EFFECT TRANSISTOR, 7
- Classification Single FETs, MOSFETs
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Inventory:4470
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Rds On (Max) @ Id, Vgs 10mOhm @ 75A, 10V
- Power Dissipation (Max) 208W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 25 V