- Product Model FDB86102LZ
- Brand Fairchild Semiconductor
- RoHS No
- Description POWER FIELD-EFFECT TRANSISTOR, 8
- Classification Single FETs, MOSFETs
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Inventory:8418
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 30A (Tc)
- Rds On (Max) @ Id, Vgs 24mOhm @ 8.3A, 10V
- Power Dissipation (Max) 3.1W (Ta)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 50 V