- Product Model PMEG6010ESBYL
- Brand NXP Semiconductors
- RoHS No
- Description DIODE SCHOTTKY 60V 1A DSN1006-2
- Classification Single Diodes
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Inventory:41500
Technical Details
- Package / Case 2-XDFN
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 2.4 ns
- Technology Schottky
- Capacitance @ Vr, F 20pF @ 10V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package DSN1006-2
- Operating Temperature - Junction 150°C (Max)
- Voltage - DC Reverse (Vr) (Max) 60 V
- Voltage - Forward (Vf) (Max) @ If 730 mV @ 1 A
- Current - Reverse Leakage @ Vr 30 µA @ 60 V