Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Rds On (Max) @ Id, Vgs 115mOhm @ 3A, 10V
• FET Feature Schottky Diode (Isolated)
• Power Dissipation (Max) 1.6W (Ta)
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-SOIC
• Vgs (Max) ±25V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 455 pF @ 10 V