Inventory:2259
Pricing:
  • 800 7.78

Technical Details

  • Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Mounting Type Surface Mount
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 30A (Tc)
  • Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
  • Power Dissipation (Max) 179W (Tc)
  • Vgs(th) (Max) @ Id 4.3V @ 5mA
  • Supplier Device Package D2PAK-7
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +25, -15V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V

Related Products


SICFET N-CH 1200V 30A D2PAK-7

Inventory: 5562

SIC MOSFET 1200 V 22 MOHM M3S SE

Inventory: 628

SICFET N-CH 1200V 60A D2PAK-7

Inventory: 595

MOSFET N-CH 80V 41A/351A 8HPSOF

Inventory: 1888

SILICON CARBIDE MOSFET, NCHANNEL

Inventory: 450

SIC MOS TO247-4L 22MOHM 1200V

Inventory: 172

SICFET N-CH 1200V 30A D2PAK-7

Inventory: 626

SICFET N-CH 1200V 28.8A D2PAK-7

Inventory: 4919

Top