Technical Details

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 128A (Tc)
• Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 15V
• Power Dissipation (Max) 542W (Tc)
• Vgs(th) (Max) @ Id 2.69V @ 15mA
• Supplier Device Package TO-247-4
• Drive Voltage (Max Rds On, Min Rds On) 15V
• Vgs (Max) ±15V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 219 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds 5873 pF @ 800 V