- Product Model FQD1N80TM
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 800V 1A DPAK
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.41
- 5000 0.39
- 12500 0.38
- 25000 0.38
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 1A (Tc)
- Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
- Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-252AA
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 25 V
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