- Product Model FQB34P10TM
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET P-CH 100V 33.5A D2PAK
- Classification Single FETs, MOSFETs
-
PDF
- 800 1.71
- 1600 1.46
- 2400 1.37
- 5600 1.32
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 33.5A (Tc)
- Rds On (Max) @ Id, Vgs 60mOhm @ 16.75A, 10V
- Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2910 pF @ 25 V
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