- Product Model IMW120R045M1XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SICFET N-CH 1.2KV 52A TO247-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 16.76
- 30 13.57
- 120 12.77
- 510 11.57
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 52A (Tc)
- Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
- Power Dissipation (Max) 228W (Tc)
- Vgs(th) (Max) @ Id 5.7V @ 10mA
- Supplier Device Package PG-TO247-3-41
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Vgs (Max) +20V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 800 V
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