• 库存 2034
定价:
  • 1 3.79
  • 50 3
  • 100 2.57
  • 500 2.29
  • 1000 1.96
  • 2000 1.84
  • 5000 1.77

技术参数

  • Package / Case TO-220-2 Full Pack
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 300pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 6A
  • Supplier Device Package TO-220FM
  • Operating Temperature - Junction 175°C (Max)
  • Voltage - DC Reverse (Vr) (Max) 650 V
  • Voltage - Forward (Vf) (Max) @ If 1.5 V @ 6 A
  • Current - Reverse Leakage @ Vr 30 µA @ 650 V
  • ECCN EAR99
  • HTSUS 8541.10.0080
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


DIODE SIL CARB 650V 24A TO220-2

库存: 2062

  • 1: 3.96
  • 50: 3.14
  • 100: 2.69
  • 500: 2.39
  • 1000: 2.05
  • 2000: 1.93
  • 5000: 1.85

MOSFET N-CH 600V 31A TO220

库存: 1500

  • 1: 4.15
  • 50: 3.29
  • 100: 2.82
  • 500: 2.51
  • 1000: 2.15
  • 2000: 2.02
  • 5000: 1.94

DIODE GEN PURP 1.2KV 1A DO214AC

库存: 11330

  • 7500: 0.06
  • 15000: 0.05
  • 37500: 0.05
  • 52500: 0.04
  • 187500: 0.04

DIODE SIL CARBIDE 650V 4A LPTL

库存: 2474

  • 1000: 1.41

DIODE SIL CARB 650V 10A TO220FM

库存: 1715

  • 1: 4.54
  • 50: 3.6
  • 100: 3.08
  • 500: 3.02

MOSFET N-CH 650V 31A TO220-3

库存: 7919

  • 1: 5.26
  • 50: 4.2
  • 100: 3.89
Top