- 产品型号 IDH10G65C6XKSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 DIODE SIL CARB 650V 24A TO220-2
- 分类 单二极管
-
PDF
- 库存 2062
- 1 3.96
- 50 3.14
- 100 2.69
- 500 2.39
- 1000 2.05
- 2000 1.93
- 5000 1.85
技术参数
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 495pF @ 1V, 1MHz
- Current - Average Rectified (Io) 24A
- Supplier Device Package PG-TO220-2
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.35 V @ 10 A
- Current - Reverse Leakage @ Vr 33 µA @ 420 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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