- 产品型号 SIHP050N60E-GE3
- 品牌 Vishay / Siliconix
- RoHS Yes
- 描述 MOSFET N-CH 600V 51A TO220AB
- 分类 单 FET、MOSFET
-
PDF
- 库存 2456
- 1 8.94
- 10 7.67
- 100 6.39
- 500 5.64
- 1000 5.07
- 2000 4.75
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 51A (Tc)
- Rds On (Max) @ Id, Vgs 50mOhm @ 23A, 10V
- Power Dissipation (Max) 278W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3459 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant
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