- 产品型号 STP57N65M5
- 品牌 STMicroelectronics
- RoHS Yes
- 描述 MOSFET N-CH 650V 42A TO220
- 分类 单 FET、MOSFET
-
PDF
- 库存 1500
- 1 10.88
- 50 8.81
- 100 8.29
- 500 7.51
- 1000 6.89
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 42A (Tc)
- Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
- Power Dissipation (Max) 250W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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