- 产品型号 IPW60R037CSFDXKSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 MOSFET N CH
- 分类 单 FET、MOSFET
-
PDF
- 库存 1669
- 1 10.73
- 30 8.57
- 120 7.67
- 510 6.76
- 1020 6.09
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 54A (Tc)
- Rds On (Max) @ Id, Vgs 37mOhm @ 32.6A, 10V
- Power Dissipation (Max) 245W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 1.63mA
- Supplier Device Package PG-TO247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5623 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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