- 产品型号 IPW65R018CFD7XKSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 650 V COOLMOS CFD7 SUPERJUNCTION
- 分类 单 FET、MOSFET
-
PDF
- 库存 1500
- 1 20.52
- 30 17.01
- 120 15.95
- 510 13.61
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 106A (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 58.2A, 10V
- Power Dissipation (Max) 446W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 2.91mA
- Supplier Device Package PG-TO247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 11659 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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