技术参数

• Package / Case TO-220-2
• Mounting Type Through Hole
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 300pF @ 1V, 1MHz
• Current - Average Rectified (Io) 10A
• Supplier Device Package PG-TO220-2-1
• Operating Temperature - Junction -55°C ~ 175°C
• Voltage - DC Reverse (Vr) (Max) 650 V
• Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
• Current - Reverse Leakage @ Vr 180 µA @ 650 V
• ECCN EAR99
• HTSUS 8541.10.0080
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant