- 产品型号 IS43DR16320E-3DBL
- 品牌 ISSI (Integrated Silicon Solution, Inc.)
- RoHS Yes
- 描述 IC DRAM 512MBIT PAR 84TWBGA
- 分类 记忆
-
PDF
- 库存 1679
定价:
- 1 3.25
- 10 2.95
- 25 2.88
- 40 2.87
- 209 2.57
- 418 2.56
- 627 2.47
- 1045 2.35
技术参数
- Package / Case 84-TFBGA
- Mounting Type Surface Mount
- Memory Size 512Mbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 85°C (TC)
- Voltage - Supply 1.7V ~ 1.9V
- Technology SDRAM - DDR2
- Clock Frequency 333 MHz
- Memory Format DRAM
- Supplier Device Package 84-TWBGA (8x12.5)
- Write Cycle Time - Word, Page 15ns
- Memory Interface Parallel
- Access Time 450 ps
- Memory Organization 32M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0028
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
IC DRAM 512MBIT PAR 84TWBGA
库存: 1977
- 1: 4.33
- 10: 3.93
- 25: 3.84
- 40: 3.82
- 209: 3.43
- 418: 3.42
- 627: 3.29
- 1045: 3.13
512M, 1.8V, DDR2, 32Mx16, 333Mhz
库存: 1500
- 2500: 2.32
