- 产品型号 IS43DR16320C-3DBL
- 品牌 ISSI (Integrated Silicon Solution, Inc.)
- RoHS Yes
- 描述 IC DRAM 512MBIT PAR 84TWBGA
- 分类 记忆
-
PDF
- 库存 1977
- 1 4.33
- 10 3.93
- 25 3.84
- 40 3.82
- 209 3.43
- 418 3.42
- 627 3.29
- 1045 3.13
技术参数
- Package / Case 84-TFBGA
- Mounting Type Surface Mount
- Memory Size 512Mbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 70°C (TA)
- Voltage - Supply 1.7V ~ 1.9V
- Technology SDRAM - DDR2
- Clock Frequency 333 MHz
- Memory Format DRAM
- Supplier Device Package 84-TWBGA (8x12.5)
- Write Cycle Time - Word, Page 15ns
- Memory Interface Parallel
- Access Time 450 ps
- Memory Organization 32M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0028
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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IC MCU 32BIT 1MB FLASH 289NFBGA
库存: 1670
- 1: 36.41
- 10: 33.58
- 25: 32.07
- 90: 28.68
- 270: 27.36
IC DRAM 512MBIT PAR 84TWBGA
库存: 1500
- 2500: 3.1
IC DRAM 512MBIT PAR 84TWBGA
库存: 1500
- 209: 5.89
IC DRAM 512MBIT PAR 84TWBGA
库存: 6158
- 1: 3.25
- 10: 2.95
- 25: 2.88
- 40: 2.87
- 209: 2.57
- 418: 2.56
- 627: 2.47
- 1045: 2.35
IC DRAM 512MBIT PAR 84TWBGA
库存: 1679
- 1: 3.25
- 10: 2.95
- 25: 2.88
- 40: 2.87
- 209: 2.57
- 418: 2.56
- 627: 2.47
- 1045: 2.35
IC DRAM 512MBIT PAR 84TWBGA
库存: 1870
- 1: 5.4
- 10: 4.93
- 25: 4.83
- 40: 4.8
- 209: 4.31
- 418: 4.29
- 627: 4.02
- 1045: 3.85
IC FLASH 256MBIT PARALLEL 56TSOP
库存: 2409
- 1: 10.12
- 10: 9.37
- 25: 9.16
- 40: 9.11
- 91: 8.02
- 273: 7.62
- 455: 7.54
- 1001: 7.29
IC DRAM 512MBIT PAR 84VFBGA
库存: 24399
- 1: 1.72
- 10: 1.54
- 25: 1.52
- 40: 1.52
- 209: 1.4
