• 库存 2189
定价:
  • 1 4.55
  • 10 4.13
  • 25 4.04
  • 40 4.02
  • 108 3.6
  • 324 3.59
  • 540 3.46
  • 972 3.29

技术参数

  • Package / Case 66-TSSOP (0.400", 10.16mm Width)
  • Mounting Type Surface Mount
  • Memory Size 512Mbit
  • Memory Type Volatile
  • Operating Temperature 0°C ~ 70°C (TA)
  • Voltage - Supply 2.3V ~ 2.7V
  • Technology SDRAM - DDR
  • Clock Frequency 200 MHz
  • Memory Format DRAM
  • Supplier Device Package 66-TSOP II
  • Write Cycle Time - Word, Page 15ns
  • Memory Interface Parallel
  • Access Time 700 ps
  • Memory Organization 32M x 16
  • DigiKey Programmable Not Verified
  • ECCN 3A991B2A
  • HTSUS 8542.32.0024
  • Moisture Sensitivity Level (MSL) 3 (168 Hours)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

相关产品


IC DRAM 512MBIT PAR 66TSOP II

库存: 1500

  • 1000: 3.36

IC DRAM 512MBIT PAR 66TSOP II

库存: 2753

  • 1: 5.11
  • 10: 4.66
  • 25: 4.57
  • 40: 4.54
  • 108: 4.08
  • 324: 4.06
  • 540: 3.81
  • 972: 3.64

IC DRAM 512MBIT PAR 66TSOP II

库存: 1827

  • 1: 3.94
  • 10: 3.58
  • 25: 3.5
  • 40: 3.48
  • 108: 3.12
  • 324: 3.11
  • 540: 3
  • 972: 2.85

IC DRAM 512MBIT PARALLEL 66TSOP

库存: 1797

  • 1: 6.01
  • 10: 5.48
  • 25: 5.38
  • 40: 5.34
  • 80: 4.79
  • 230: 4.77
  • 440: 4.47
  • 1080: 4.28

IC DRAM 512MBIT PARALLEL 66TSOP

库存: 6101

  • 2000: 4.15
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