- 产品型号 MT46V32M16P-5B:J
- 品牌 Micron Technology
- RoHS Yes
- 描述 IC DRAM 512MBIT PARALLEL 66TSOP
- 分类 记忆
-
PDF
- 库存 1797
- 1 6.01
- 10 5.48
- 25 5.38
- 40 5.34
- 80 4.79
- 230 4.77
- 440 4.47
- 1080 4.28
技术参数
- Package / Case 66-TSSOP (0.400", 10.16mm Width)
- Mounting Type Surface Mount
- Memory Size 512Mbit
- Memory Type Volatile
- Operating Temperature 0°C ~ 70°C (TA)
- Voltage - Supply 2.5V ~ 2.7V
- Technology SDRAM - DDR
- Clock Frequency 200 MHz
- Memory Format DRAM
- Supplier Device Package 66-TSOP
- Write Cycle Time - Word, Page 15ns
- Memory Interface Parallel
- Access Time 700 ps
- Memory Organization 32M x 16
- DigiKey Programmable Not Verified
- ECCN EAR99
- HTSUS 8542.32.0028
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
IC DRAM 512MBIT PAR 66TSOP II
库存: 2189
- 1: 4.55
- 10: 4.13
- 25: 4.04
- 40: 4.02
- 108: 3.6
- 324: 3.59
- 540: 3.46
- 972: 3.29
IC DRAM 512MBIT PAR 66TSOP II
库存: 1827
- 1: 3.94
- 10: 3.58
- 25: 3.5
- 40: 3.48
- 108: 3.12
- 324: 3.11
- 540: 3
- 972: 2.85
IC FLASH 256MBIT SPI 133MHZ 16SO
库存: 2615
- 1: 5.69
- 10: 5.2
- 25: 5.1
- 40: 5.06
- 80: 4.54
- 230: 4.52
- 440: 4.24
- 1440: 4.06
IC DRAM 2GBIT PARALLEL 96FBGA
库存: 2517
- 1: 5.42
- 10: 4.95
- 25: 4.86
- 40: 4.82
- 80: 4.33
- 230: 4.31
- 440: 4.04
- 1224: 3.87
IC DRAM 4GBIT PAR 96FBGA
库存: 21124
- 1: 6.83
- 10: 6.28
- 25: 6.15
- 40: 6.13
- 80: 5.5
- 230: 5.33
- 440: 5.07
- 1224: 4.9
IC DRAM 512MBIT PARALLEL 66TSOP
库存: 6101
- 2000: 4.15
IC DRAM 2GBIT PARALLEL 84FBGA
库存: 2650
- 1: 15.4
IC DRAM 256MBIT PAR 54TSOP II
库存: 4540
- 1: 5
- 10: 4.54
- 25: 4.44
- 40: 4.42
- 80: 3.96
- 230: 3.95
- 440: 3.8
- 1080: 3.61
