技术参数

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type 2 PNP (Dual)
• Operating Temperature 150°C (TJ)
• Power - Max 350mW
• Current - Collector (Ic) (Max) 100mA
• Voltage - Collector Emitter Breakdown (Max) 45V
• Vce Saturation (Max) @ Ib, Ic 100mV @ 2mA, 5V
• Current - Collector Cutoff (Max) 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
• Frequency - Transition 100MHz
• Supplier Device Package DFN1010B-6
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant