技术参数
- Package / Case 6-XFDFN Exposed Pad
- Mounting Type Surface Mount
- Transistor Type 1 NPN, 1 PNP
- Operating Temperature 150°C (TJ)
- Power - Max 350mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 45V
- Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
- Frequency - Transition 100MHz
- Supplier Device Package DFN1010B-6
- Grade Automotive
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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