- 产品型号 SCT20N120
- 品牌 STMicroelectronics
- RoHS Yes
- 描述 SICFET N-CH 1200V 20A HIP247
- 分类 单 FET、MOSFET
-
PDF
- 库存 1999
- 1 16.43
- 30 13.3
- 120 12.51
- 510 11.34
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 200°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 20A (Tc)
- Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
- Power Dissipation (Max) 175W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 1mA
- Supplier Device Package HiP247™
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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