技术参数

• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 200°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 20A (Tc)
• Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
• Power Dissipation (Max) 175W (Tc)
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Supplier Device Package H2PAK-2
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant