- 产品型号 GB01SLT06-214
- 品牌 GeneSiC Semiconductor
- RoHS Yes
- 描述 DIODE SIL CARB 650V 1A DO214AA
- 分类 单二极管
-
PDF
- 库存 15850
定价:
- 3000 1.01
- 6000 0.97
技术参数
- Package / Case DO-214AA, SMB
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 76pF @ 1V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package DO-214AA
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 2 V @ 1 A
- Current - Reverse Leakage @ Vr 10 µA @ 6.5 V
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
