- 产品型号 WNSC2D03650MBJ
- 品牌 WeEn Semiconductors Co., Ltd
- RoHS No
- 描述 DIODE SIL CARBIDE 650V 3A SMB
- 分类 单二极管
-
PDF
- 库存 10560
定价:
- 3000 0.69
技术参数
- Package / Case DO-214AA, SMB
- Mounting Type Surface Mount
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 130pF @ 1V, 1MHz
- Current - Average Rectified (Io) 3A
- Supplier Device Package SMB
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A
- Current - Reverse Leakage @ Vr 20 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
