技术参数

• Package / Case 10-PowerTQFN
• Mounting Type Surface Mount
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 100pF @ 0V, 1MHz
• Current - Average Rectified (Io) 9.7A
• Supplier Device Package 10-Power QFN (3.3x3.3)
• Operating Temperature - Junction -55°C ~ 160°C
• Voltage - DC Reverse (Vr) (Max) 600 V
• Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1.7 A
• Current - Reverse Leakage @ Vr 50 µA @ 600 V
• ECCN EAR99
• HTSUS 8541.10.0080
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• RoHS Status RoHS Compliant