- 产品型号 G1K3N10LL
- 品牌 Goford Semiconductor
- RoHS Yes
- 描述 MOSFET N-CH 100V 3.4A SOT-23-6L
- 分类 单 FET、MOSFET
-
PDF
- 库存 10500
定价:
- 1 0.06
技术参数
- Package / Case SOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.4A (Tc)
- Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 10V
- Power Dissipation (Max) 2.28W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SOT-23-6
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 808 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0000
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
