技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
• Rds On (Max) @ Id, Vgs 190mOhm @ 3.9A, 6V
• Power Dissipation (Max) 1.1W (Ta), 84W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 12.2mA
• Supplier Device Package 8-DFN (5x6)
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) +7V, -1.4V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 96 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant