- 产品型号 G3R30MT12J-TR
- 品牌 GeneSiC Semiconductor
- RoHS Yes
- 描述 1200V 30M TO-263-7 G3R SIC MOSFE
- 分类 单 FET、MOSFET
-
PDF
- 库存 2648
- 800 17.64
技术参数
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 85A (Tc)
- Rds On (Max) @ Id, Vgs 34mOhm @ 45A, 18V
- Power Dissipation (Max) 408W (Tc)
- Vgs(th) (Max) @ Id 2.7V @ 24mA
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 118 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 3863 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
SICFET N-CH 1200V 30A D2PAK-7
库存: 7062
- 1: 19.68
- 50: 15.93
- 100: 15
- 500: 13.59
DIODE SIL CARB 1.2KV 24.5A TO252
库存: 2557
- 1: 10.65
- 75: 8.5
- 150: 7.61
- 525: 6.71
- 1050: 6.04
1200V 160M TO-263-7 G3R SIC MOSF
库存: 6300
- 800: 5.45
- 1600: 5.27
SIC MOSFET N-CH 96A TO263-7
库存: 1518
- 1: 22.83
1200V 40M TO-263-7 G3R SIC MOSFE
库存: 2190
- 800: 13.64
1200V 75M TO-263-7 G3R SIC MOSFE
库存: 7468
- 800: 8.34
SICFET N-CH 1200V 35A D3PAK
库存: 1534
- 1: 13.73
SICFET N-CH 1200V 30A D2PAK-7
库存: 2259
- 800: 7.78
SICFET N-CH 1200V 28.8A D2PAK-7
库存: 6419
- 800: 8.93
