- 产品型号 NTBG080N120SC1
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 SICFET N-CH 1200V 30A D2PAK-7
- 分类 单 FET、MOSFET
-
PDF
- 库存 2259
- 800 7.78
技术参数
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
- Power Dissipation (Max) 179W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 5mA
- Supplier Device Package D2PAK-7
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25, -15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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