- 产品型号 BSDL10S65E6
- 品牌 J.W. Miller / Bourns
- RoHS Yes
- 描述 DIODE SIC SCHTKY 650V 10A DFN8X8
- 分类 单二极管
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PDF
- 库存 4447
定价:
- 3000 1.69
- 6000 1.63
技术参数
- Package / Case 4-PowerVSFN
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 500pF @ 1V, 1MHz
- Current - Average Rectified (Io) 10A
- Supplier Device Package 5-DFN (8x8)
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.45 V @ 10 A
- Current - Reverse Leakage @ Vr 50 µA @ 650 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
