技术参数

• Package / Case 4-PowerVQFN
• Mounting Type Surface Mount
• Speed No Recovery Time > 500mA (Io)
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 393pF @ 0V, 1MHz
• Current - Average Rectified (Io) 21A
• Supplier Device Package 4-QFN (8x8)
• Operating Temperature - Junction -55°C ~ 175°C
• Voltage - DC Reverse (Vr) (Max) 650 V
• Voltage - Forward (Vf) (Max) @ If 1.5 V @ 6 A
• Current - Reverse Leakage @ Vr 20 µA @ 650 V
• ECCN EAR99
• HTSUS 8541.10.0080
• Moisture Sensitivity Level (MSL) 1 (Unlimited)