技术参数

• Package / Case 22-PowerVFQFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
• Rds On (Max) @ Id, Vgs 360mOhm @ 500mA, 6V
• Vgs(th) (Max) @ Id 2.5V @ 2.8mA
• Supplier Device Package 22-QFN (5x7)
• Drive Voltage (Max Rds On, Min Rds On) 0V, 6V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 0.75 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)