技术参数

• Package / Case 3-VLGA
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 28A
• Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 5V
• Power Dissipation (Max) 28W
• Vgs(th) (Max) @ Id 2.1V @ 5mA
• Supplier Device Package 3-FCLGA (3.2x2.2)
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) +6V, -4V
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 85 V
• ECCN EAR99
• HTSUS 8541.29.0040
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant