技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 55A (Tj)
• Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V
• Power Dissipation (Max) 262W
• Vgs(th) (Max) @ Id 5.6V @ 10mA
• Supplier Device Package TO-247-4L
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Vgs (Max) +22V, -4V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 107 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 1337 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected