- 产品型号 SCTW60N120G2
- 品牌 STMicroelectronics
- RoHS Yes
- 描述 DISCRETE
- 分类 单 FET、MOSFET
-
PDF
- 库存 1500
- 1 30.43
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 200°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 18V
- Power Dissipation (Max) 389W (Tc)
- Vgs(th) (Max) @ Id 5V @ 1mA
- Supplier Device Package HiP247™
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +18V, -5V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 94 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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