- 产品型号 CGD65A130S2-T13
- 品牌 Cambridge GaN Devices
- RoHS Yes
- 描述 650V GAN HEMT, 130MOHM, DFN8X8.
- 分类 单 FET、MOSFET
- 库存 4852
- 3500 3.32
技术参数
- Package / Case 16-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Rds On (Max) @ Id, Vgs 182mOhm @ 900mA, 12V
- FET Feature Current Sensing
- Vgs(th) (Max) @ Id 4.2V @ 4.2mA
- Supplier Device Package 16-DFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Vgs (Max) +20V, -1V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 12 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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