- 产品型号 IMT65R163M1HXUMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SILICON CARBIDE MOSFET
- 分类 单 FET、MOSFET
- 库存 3500
- 2000 2.87
技术参数
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package PG-HSOF-8-1
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Drain to Source Voltage (Vdss) 650 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
SILICON CARBIDE MOSFET PG-TO263-
库存: 2428
- 1000: 2.86
- 2000: 2.69
SILICON CARBIDE MOSFET
库存: 3431
- 2000: 10.74
SILICON CARBIDE MOSFET
库存: 3434
- 2000: 8.13
SILICON CARBIDE MOSFET
库存: 3471
- 2000: 6.45
SILICON CARBIDE MOSFET
库存: 3500
- 2000: 5.09
SILICON CARBIDE MOSFET
库存: 3500
- 2000: 4.41
SILICON CARBIDE MOSFET
库存: 3465
- 2000: 4.4
SILICON CARBIDE MOSFET
库存: 3304
- 2000: 3.46
SILICON CARBIDE MOSFET
库存: 3465
- 2000: 2.11
SIC DISCRETE
库存: 1647
- 1: 20.44
- 10: 18.01
- 240: 15.09
