- 产品型号 IMT65R083M1HXUMA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SILICON CARBIDE MOSFET
- 分类 单 FET、MOSFET
- 库存 3465
- 2000 4.4
技术参数
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package PG-HSOF-8-1
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Drain to Source Voltage (Vdss) 650 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
SIC, MOSFET, 60M, 650V, TOLL, IN
库存: 3974
- 2000: 8.15
SILICON CARBIDE MOSFET PG-TO263-
库存: 2322
- 1000: 5.12
- 2000: 4.8
SILICON CARBIDE MOSFET
库存: 3471
- 2000: 6.45
SILICON CARBIDE MOSFET
库存: 3500
- 2000: 5.09
SILICON CARBIDE MOSFET
库存: 3500
- 2000: 4.41
SILICON CARBIDE MOSFET
库存: 3304
- 2000: 3.46
SILICON CARBIDE MOSFET
库存: 3500
- 2000: 2.87
SILICON CARBIDE MOSFET
库存: 3465
- 2000: 2.11
SILICON CARBIDE MOSFET, PG-TO247
库存: 1690
- 1: 11.33
- 30: 9.17
- 120: 8.63
- 510: 7.82
- 1020: 7.17
E SERIES POWER MOSFET POWERPAK 1
库存: 3467
- 2000: 4.22
