- 产品型号 GP2T080A120H
- 品牌 SemiQ
- RoHS Yes
- 描述 SIC MOSFET 1200V 80M TO-247-4L
- 分类 单 FET、MOSFET
-
PDF
- 库存 1513
- 1 11.2
- 30 8.94
- 120 8
- 510 7.06
- 1020 6.35
技术参数
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
- Power Dissipation (Max) 188W (Tc)
- Vgs(th) (Max) @ Id 4V @ 10mA
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 61 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1377 pF @ 1000 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Affected
- RoHS Status ROHS3 Compliant
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