• 库存 1519
定价:
  • 1 19.68
  • 30 15.93
  • 120 15
  • 510 13.59

技术参数

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 49A (Tc)
  • Rds On (Max) @ Id, Vgs 60mOhm @ 17.6A, 15V
  • Power Dissipation (Max) 176W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 4.84mA
  • Supplier Device Package TO-247-4L
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +19V, -8V
  • Drain to Source Voltage (Vdss) 650 V
  • Gate Charge (Qg) (Max) @ Vgs 63 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 1621 pF @ 600 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

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