- 产品型号 TP65H035G4WSQA
- 品牌 Transphorm
- RoHS Yes
- 描述 650 V 46.5 GAN FET
- 分类 单 FET、MOSFET
-
PDF
- 库存 1781
- 1 19.32
- 30 15.64
- 120 14.72
- 510 13.34
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)
- Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
- Power Dissipation (Max) 187W (Tc)
- Vgs(th) (Max) @ Id 4.8V @ 1mA
- Supplier Device Package TO-247-3
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- RoHS Status ROHS3 Compliant
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