技术参数

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C
• Technology GaNFET (Cascode Gallium Nitride FET)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
• Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
• Power Dissipation (Max) 156W (Tc)
• Vgs(th) (Max) @ Id 4.8V @ 1mA
• Supplier Device Package TO-247-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 22 nC @ 0 V
• Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)