技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 106A (Tc)
• Rds On (Max) @ Id, Vgs 18mOhm @ 58.2A, 10V
• Power Dissipation (Max) 446W (Tc)
• Vgs(th) (Max) @ Id 4.5V @ 2.91mA
• Supplier Device Package PG-TO247-4-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 11660 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant