技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
• Frequency - Transition 250MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 200 mA
• Voltage - Collector Emitter Breakdown (Max) 40 V
• Power - Max 625 mW
• ECCN EAR99
• HTSUS 8541.21.0075