技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 19A (Ta), 42A (Tc)
• Rds On (Max) @ Id, Vgs 4.9mOhm @ 18A, 10V
• Power Dissipation (Max) 2.5W (Ta), 46W (Tc)
• Vgs(th) (Max) @ Id 3V @ 1mA
• Supplier Device Package 8-PQFN (5x6)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2820 pF @ 15 V
• ECCN EAR99
• HTSUS 8542.39.0001