技术参数

• Package / Case DirectFET™ Isometric MZ
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.9A (Ta), 28A (Tc)
• Rds On (Max) @ Id, Vgs 56mOhm @ 5.6A, 10V
• Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
• Vgs(th) (Max) @ Id 5V @ 100µA
• Supplier Device Package DIRECTFET™ MZ
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1411 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095