技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Transistor Type PNP - Darlington
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V
• Frequency - Transition 125MHz
• Supplier Device Package SOT-223-4
• Current - Collector (Ic) (Max) 1.2 A
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.29.0075